VishaySIS990DN-T1-GE3MOSFET
Trans MOSFET N-CH 100V 12.1A 8-Pin PowerPAK 1212 EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 100 | |
| ±20 | |
| 4 | |
| 12.1 | |
| 100 | |
| 1 | |
| 85@10V | |
| 4@7.5V|5.2@10V | |
| 5.2 | |
| 250@50V | |
| 2800 | |
| 6 | |
| 8 | |
| 8 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Increase the current or voltage in your circuit with this SIS990DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2800 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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