| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±20 | |
| 2.3 | |
| 16 | |
| 9.5@10V | |
| 15@10V|7.3@4.5V | |
| 15 | |
| 2.1 | |
| 2.2 | |
| 4.5 | |
| 880@10V | |
| 310 | |
| 3500 | |
| 8 | |
| 11 | |
| 16 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 7.9@10V|10.2@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 3.05 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
This SIS438DN-T1-GE3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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