| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 20 | |
| 2.2 | |
| 25 | |
| 100 | |
| 1 | |
| 4.3@10V | |
| 13.6@4.5V|29.5@10V | |
| 29.5 | |
| 2070@15V | |
| 4500 | |
| 10 | |
| 10|15 | |
| 22|25 | |
| 10|20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 5.89 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common gate amplifier using this SIRA12DP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 4500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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