| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.8 | |
| 60 | |
| 100 | |
| 1 | |
| 8.7@10V | |
| 39.5@10V|30.3@7.5V|19.5@4.5V | |
| 39.5 | |
| 1975@50V | |
| 748 | |
| 5400 | |
| 9|10 | |
| 12|14 | |
| 32|34 | |
| 11|13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 17.6 | |
| 5.4 | |
| 65 | |
| 0.74 | |
| 3 | |
| 49 | |
| 1.1 | |
| 0.2 | |
| 1.9 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 5.89 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | PowerPAK SO EP |
| 8 | |
| Forme de sonde | No Lead |
As an alternative to traditional transistors, the SIR882ADP-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 5400 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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