| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 9 | |
| 30@4.5V | |
| 6@4.5V|11.5@8V | |
| 2500 | |
| 1700|1600 | |
| 600|300 | |
| 3800|5600 | |
| 300|150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75 |
| Largeur du paquet | 2.05 |
| Longueur du paquet | 2.05 |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | PowerPAK SC-70 |
| 6 |
Create an effective common drain amplifier using this SIB422EDK-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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