| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 12 | |
| 100 | |
| 1 | |
| 35@10V | |
| 10@4.5V|19@10V | |
| 19 | |
| 4.5 | |
| 3 | |
| 15 | |
| 950@15V | |
| 120@15V | |
| 1.5 | |
| 150 | |
| 3500 | |
| 10|12 | |
| 110|12 | |
| 25|30 | |
| 40|10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 29@10V|46@4.5V | |
| 3.5 | |
| 35 | |
| 80 | |
| 0.8 | |
| 3 | |
| 20 | |
| 1.2 | |
| 1.2 | |
| 13 | |
| 20 | |
| 7.9 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.73 |
| Largeur du paquet | 2.05 |
| Longueur du paquet | 2.05 |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | PowerPAK SC-70 EP |
| 6 | |
| Forme de sonde | No Lead |
Compared to traditional transistors, SIA421DJ-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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