| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 8 | |
| ±5 | |
| 0.8 | |
| 12 | |
| 11@4.5V | |
| 21@5V|19@4.5V | |
| 6.5 | |
| 2.5 | |
| 20 | |
| 1800@4V | |
| 650 | |
| 3500 | |
| 20 | |
| 10 | |
| 65 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 16@1.5V|13@1.8V|11@2.5V|9@4.5V|27@1.2V | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75 |
| Largeur du paquet | 2.05 |
| Longueur du paquet | 2.05 |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | PowerPAK SC-70 |
| 6 | |
| Forme de sonde | No Lead |
This SIA414DJ-T1-GE3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 3500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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