| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| TrenchFET | |
| Enhancement | |
| N | |
| 1 | |
| 8 | |
| ±5 | |
| 0.7 | |
| 5.4 | |
| 3000 | |
| 1 | |
| 43@4.5V | |
| 8.5@4.5V | |
| 710@4V | |
| 1800 | |
| 10 | |
| 15 | |
| 40 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.26 |
| Largeur du paquet | 0.96 |
| Longueur du paquet | 0.96 |
| Carte électronique changée | 4 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | Micro Foot |
| 4 | |
| Forme de sonde | Ball |
Create an effective common drain amplifier using this SI8466EDB-T2-E1 power MOSFET from Vishay. Its maximum power dissipation is 1800 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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