VishaySI7113DN-T1-GE3MOSFET
Trans MOSFET P-CH 100V 13.2A 8-Pin PowerPAK 1212 EP T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 13.2 | |
| 134@10V | |
| 16.5@4.5V|35@10V | |
| 35 | |
| 1480@50V | |
| 3700 | |
| 40 | |
| 110 | |
| 51 | |
| 30 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) |
| Largeur du paquet | 3.05 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common source amplifier using this SI7113DN-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 3700 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -50 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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