| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±16 | |
| 2 | |
| 14 | |
| 4.9@10V | |
| 20@4.5V | |
| 4.9 | |
| 6.3 | |
| 20 | |
| 410 | |
| 3800 | |
| 10 | |
| 10 | |
| 60 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.1@10V|5@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.07(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | PowerPAK 1212 EP |
| 8 | |
| Forme de sonde | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI7108DN-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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