| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N|P | |
| 2 | |
| 20 | |
| ±12 | |
| 4@N Channel|2.4@P Channel | |
| 55@4.5V@N Channel|150@4.5V@P Channel | |
| 2.8@5V|2.6@4.5V@N Channel|3.9@5V|3.6@4.5V@P Channel | |
| 285@10V@N Channel|252@10V@P Channel | |
| 1700@N Channel|1300@P Channel | |
| 6@N Channel|8@P Channel | |
| 10|9@N Channel|12|40@P Channel | |
| 14|16@N Channel|15|18@P Channel | |
| 5|8@N Channel|4|19@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1(Max) |
| Largeur du paquet | 1.65 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 8 |
| Conditionnement du fournisseur | Chip FET |
| 8 |
Use Vishay's SI5513CDC-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1700 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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