| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N|P | |
| 2 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 6@N Channel|4.3@P Channel | |
| 100 | |
| 1 | |
| 47@10V@N Channel|89@10V@P Channel | |
| 4.1@4.5V@P Channel|7.8@10V|2.75@4.5V@N Channel|6@10V | |
| 7.8@P Channel|6@N Channel | |
| 1.8@P Channel|0.9@N Channel | |
| 1.3 | |
| 11@P Channel|6@N Channel | |
| 340@15V@P Channel|305@15V@N Channel | |
| 51@15V@P Channel|29@15V@N Channel | |
| 1 | |
| 67@P Channel|65@N Channel | |
| 1780 | |
| 17@P Channel|7.7|9@N Channel|6 | |
| 40@P Channel|13|16@N Channel|12 | |
| 20@P Channel|17|14@N Channel|9 | |
| 40@P Channel|5.5|16@N Channel|7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 73@10V@P Channel|113@4.5V|38@10V@N Channel|52@4.5V | |
| 1.78 | |
| 15@P Channel|24@N Channel | |
| 110@P Channel|120@N Channel | |
| 0.8 | |
| 3.1@P Channel|3.8@N Channel | |
| 17@P Channel|14@N Channel | |
| 1.2 | |
| 2@P Channel|0.6@N Channel | |
| 20@P Channel|6.2@N Channel | |
| 20 | |
| 3.4@P Channel|4.9@N Channel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.38 |
| Largeur du paquet | 3.9 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI4532CDY-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 1780 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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