| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| -55 to 150 | |
| 3.5 | |
| 50@10V | |
| 30@10V | |
| 30 | |
| 1560 | |
| 10 | |
| 7 | |
| 22 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
Use Vishay's SI4488DY-T1-E3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1560 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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