| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±20 | |
| 2.4 | |
| -55 to 150 | |
| 19.8 | |
| 100 | |
| 1 | |
| 4.6@10V | |
| 14.5@4.5V|30@10V | |
| 30 | |
| 3.9 | |
| 4.5 | |
| 10 | |
| 2110@10V | |
| 235@10V | |
| 1 | |
| 926 | |
| 2000 | |
| 13 | |
| 24 | |
| 26 | |
| 18 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 3.8@10V|4.7@4.5V | |
| 2 | |
| 50 | |
| 120 | |
| 0.7 | |
| 2.3 | |
| 20 | |
| 1.2 | |
| 0.4 | |
| 2.8 | |
| 20 | |
| 15.5 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The SI4204DY-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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