| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±25 | |
| 27.2 | |
| 4.5@10V | |
| 29@4.5V|62@10V | |
| 62 | |
| 4200@20V | |
| 3000 | |
| 28 | |
| 34 | |
| 45 | |
| 42 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.55(Max) |
| Largeur du paquet | 4(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
If you need to either amplify or switch between signals in your design, then Vishay's SI4122DY-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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