| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| 0.18um | |
| Enhancement | |
| N|P | |
| 2 | |
| 20 | |
| ±12 | |
| 1.5 | |
| -55 to 150 | |
| 3.9@N Channel|2.1@P Channel | |
| 100 | |
| 1 | |
| 58@4.5V@N Channel|195@4.5V@P Channel | |
| 3.2@10V|1.6@4.5V@N Channel|2.9@4.5V@P Channel|6@10V | |
| 3.2@N Channel|6@P Channel | |
| 0.4@N Channel|0.9@P Channel | |
| 0.3@N Channel|0.6@P Channel | |
| 2@N Channel|11@P Channel | |
| 150@10V@N Channel|210@10V@P Channel | |
| 22@10V@N Channel|35@10V@P Channel | |
| 0.6 | |
| 53@N Channel|50@P Channel | |
| 1100 | |
| 28@N Channel|9@P Channel | |
| 37@N Channel|16@P Channel | |
| 25@N Channel|13@P Channel | |
| 16@P Channel|15@N Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 12@N Channel|5@P Channel | |
| 0.8 | |
| 8@N Channel|21@P Channel | |
| 1.2 | |
| 0.9@N Channel|1.2@P Channel | |
| 9.6@N Channel|12.4@P Channel | |
| 12 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.65 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI3585CDV-T1-GE3 power MOSFET. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N|P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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