| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 150 | |
| ±20 | |
| -55 to 150 | |
| 1.4 | |
| 750@10V | |
| 12.2@10V|8@6V | |
| 12.2 | |
| 510@50V | |
| 2000 | |
| 14|12 | |
| 29|11 | |
| 23|28 | |
| 14|9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.65 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
As an alternative to traditional transistors, the SI3437DV-T1-E3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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