| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.5 | |
| 8 | |
| 100 | |
| 1 | |
| 24@4.5V | |
| 42@10V|21@4.5V | |
| 42 | |
| 5 | |
| 6 | |
| 22 | |
| 1670@10V | |
| 335 | |
| 2000 | |
| 39|38 | |
| 11|62 | |
| 65|53 | |
| 8|32 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20@4.5V|31@2.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.65 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this SI3407DV-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
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