| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±12 | |
| 1.5 | |
| 4.8 | |
| 10000 | |
| 1 | |
| 45@10V | |
| 22.8@10V|10.6@4.5V | |
| 22.8 | |
| 1000 | |
| 52|62 | |
| 8|65 | |
| 52|47 | |
| 7|28 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) |
| Largeur du paquet | 1.4(Max) |
| Longueur du paquet | 3.04(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI2371EDS-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 1000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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