| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 80 | |
| ±20 | |
| -55 to 150 | |
| 2.2 | |
| 270@10V | |
| 7@6V|11@10V | |
| 11 | |
| 500@40V | |
| 760 | |
| 12|15 | |
| 15|18 | |
| 20 | |
| 10|15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) |
| Largeur du paquet | 1.4(Max) |
| Longueur du paquet | 3.04(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this SI2337DS-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 760 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C.
| EDA / CAD Models |
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