| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 3.7 | |
| 100 | |
| 1 | |
| 39@4.5V | |
| 12.5@4.5V | |
| 3.3 | |
| 1.7 | |
| 1020@10V | |
| 140@10V | |
| 0.4 | |
| 191 | |
| 1250 | |
| 48 | |
| 43 | |
| 71 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 31@4.5V|41@2.5V|54@1.8V | |
| 8 | |
| 4.7 | |
| 1.25 | |
| 20 | |
| 166 | |
| 0.7 | |
| 1.5 | |
| 1.2 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) |
| Largeur du paquet | 1.4(Max) |
| Longueur du paquet | 3.04(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The SI2323DS-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 750 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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