| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| TrenchFET | |
| Enhancement | |
| N | |
| 1 | |
| 12 | |
| ±8 | |
| 4 | |
| 20@4.5V | |
| 13.1@4.5V|21.8@8V | |
| 1010@6V | |
| 1560 | |
| 9 | |
| 13 | |
| 22 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-70 |
| 6 | |
| Forme de sonde | Gull-wing |
If you need to either amplify or switch between signals in your design, then Vishay's SI1442DH-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 1560 mW. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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