| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±12 | |
| 1.4 | |
| -55 to 150 | |
| 3.9 | |
| 20000 | |
| 1 | |
| 58@10V | |
| 3.5@4.5V|7.5@10V | |
| 7.5 | |
| 0.7 | |
| 1.8 | |
| 4 | |
| 0.6 | |
| 30 | |
| 1560 | |
| 45 | |
| 60 | |
| 25 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 15 | |
| 0.87 | |
| 10 | |
| 1.2 | |
| 0.6 | |
| 6.6 | |
| 12 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-70 |
| 6 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this SI1416EDH-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1560 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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