| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 0.19 | |
| 10000 | |
| 0.025 | |
| 4000@10V | |
| 1.7@15V | |
| 0.46 | |
| 0.26 | |
| 23@25V | |
| 5@25V | |
| 1 | |
| 10 | |
| 250 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 0.65 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.7 |
| Largeur du paquet | 0.76 |
| Longueur du paquet | 1.58 |
| Carte électronique changée | 3 |
| Conditionnement du fournisseur | SC-75A |
| 3 |
Use Vishay's SI1021R-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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