| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N|P | |
| 2 | |
| 20 | |
| ±6 | |
| 1 | |
| -55 to 150 | |
| 0.485@N Channel|0.37@P Channel | |
| 1000@N Channel|2000@P Channel | |
| 0.1 | |
| 700@4.5V@N Channel|1200@4.5V@P Channel | |
| 0.75@4.5V@N Channel|1.5@4.5V@P Channel | |
| 0.225@N Channel|0.45@P Channel | |
| 0.075@N Channel|0.15@P Channel | |
| 0.45 | |
| 16@N Channel|17@P Channel | |
| 280 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 700@1.8V|530@2.5V|410@4.5V@N Channel|1800@1.8.V|1200@2.5V|800@4.5V@P Channel | |
| 6 | |
| 0.515@N Channel|0.39@P Channel | |
| 0.28 | |
| 0.65 | |
| 0.8 | |
| 1.3 | |
| 1.2 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.6(Max) |
| Largeur du paquet | 1.2 |
| Longueur du paquet | 1.7(Max) |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | SC-89 |
| 6 | |
| Forme de sonde | Flat |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI1016X-T1-GE3 power MOSFET can provide a solution. Its maximum power dissipation is 250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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