| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 0.63 | |
| 396@4.5V | |
| 0.75@4.5V|1.3@8V | |
| 43@10V | |
| 240 | |
| 11 | |
| 16 | |
| 26 | |
| 11 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.7 |
| Largeur du paquet | 0.76 |
| Longueur du paquet | 1.58 |
| Carte électronique changée | 3 |
| Conditionnement du fournisseur | SC-75A |
| 3 |
Create an effective common drain amplifier using this SI1012CR-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 240 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.