NXP SemiconductorsPMBT4403215GP BJT
Trans GP BJT PNP 40V 0.6A 250mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 5 | |
| 0.95@15mA@150mA|1.3@50mA@500mA | |
| 0.4@15mA@150mA|0.75@50mA@500mA | |
| 0.6 | |
| 50 | |
| 30@0.1mA@1V|60@1mA@1V|100@10mA@1V|100@150mA@2V|20@500mA@2V | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.4(Max) |
| Longueur du paquet | 3(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Implement this PNP PMBT4403,215 GP BJT from NXP Semiconductors to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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