onsemiNVTFS5820NLTWGMOSFET
Trans MOSFET N-CH 60V 11A Automotive AEC-Q101 8-Pin WDFN EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.3 | |
| 11 | |
| 100 | |
| 1 | |
| 11.5@10V | |
| 15@4.5V|28@10V | |
| 28 | |
| 1462@25V | |
| 3200 | |
| 22 | |
| 28 | |
| 19 | |
| 10 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) mm |
| Largeur du paquet | 3.05 mm |
| Longueur du paquet | 3.05 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | WDFN EP |
| 8 | |
| Forme de sonde | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the NVTFS5820NLTWG power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 3200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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