| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 5.7 | |
| 52@10V | |
| 14@4.5V|25@10V | |
| 25 | |
| 1258@30V | |
| 3200 | |
| 37 | |
| 58 | |
| 30 | |
| 15 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) |
| Largeur du paquet | 3.05 |
| Longueur du paquet | 3.05 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | WDFN EP |
| 8 | |
| Forme de sonde | No Lead |
Compared to traditional transistors, NTTFS5116PLTWG power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3200 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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