| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±20 | |
| 2.3 | |
| -55 to 150 | |
| 0.4 | |
| 100 | |
| 1 | |
| 800@10V | |
| 2.18@10V | |
| 2.18 | |
| 70@5V | |
| 225 | |
| 4 | |
| 6 | |
| 18 | |
| 3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 0.8 | |
| 1 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Use ON Semiconductor's NTR0202PLT1G power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 225 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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