| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 11.2 | |
| 6.5@10V | |
| 17.4@4.5V|38.5@10V | |
| 38.5 | |
| 2563@25V | |
| 2000 | |
| 38.9 | |
| 3.6 | |
| 33.8 | |
| 12.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) |
| Largeur du paquet | 4(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
If you need to either amplify or switch between signals in your design, then ON Semiconductor's NTMS4937NR2G power MOSFET is for you. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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