| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| 16 | |
| 100 | |
| 1 | |
| 8@10V | |
| 44@10V | |
| 44 | |
| 3100@50V | |
| 3300 | |
| 16 | |
| 43 | |
| 39 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.05(Max) mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 5 |
| Conditionnement du fournisseur | SO-FL EP |
| 5 | |
| Forme de sonde | No Lead |
This NTMFS6B05NT1G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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