| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2 | |
| 40 | |
| 100 | |
| 1 | |
| 1.2@10V | |
| 52@4.5V|120@10V | |
| 120 | |
| 8900@25V | |
| 3900 | |
| 25.2 | |
| 29.9 | |
| 60.3 | |
| 32.9 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.05(Max) mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 5 |
| Conditionnement du fournisseur | SO-FL EP |
| 5 | |
| Forme de sonde | No Lead |
If you need to either amplify or switch between signals in your design, then ON Semiconductor's NTMFS5C604NLT1G power MOSFET is for you. Its maximum power dissipation is 3200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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