| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 6 | |
| 100 | |
| 1 | |
| 32@10V | |
| 19@10V | |
| 19 | |
| 680@24V | |
| 2000 | |
| 34|45 | |
| 22|27 | |
| 22|45 | |
| 9|13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
This NTMD6N03R2G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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