| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 5.5 | |
| 24@10V | |
| 4.8@4.5V|9.5@10V | |
| 9.5 | |
| 520@15V | |
| 1950 | |
| 3 | |
| 5 | |
| 17 | |
| 7.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC N |
| 8 | |
| Forme de sonde | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the NTMD4840NR2G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 1950 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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