| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Dual | |
| Power Trench T1 | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±12 | |
| 1.2 | |
| -55 to 150 | |
| 0.88 | |
| 1000 | |
| 1 | |
| 260@4.5V | |
| 1.3@4.5V|2.2@10V | |
| 2.2 | |
| 0.65 | |
| 0.5 | |
| 155@20V | |
| 18@20V | |
| 0.45 | |
| 25 | |
| 350 | |
| 3.5 | |
| 6.5 | |
| 13.5 | |
| 5.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 215@4.5V|345@2.5V|600@1.8V | |
| 0.35 | |
| 3 | |
| 460 | |
| 0.8 | |
| 2 | |
| 1.2 | |
| 12 | |
| 0.88 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 mm |
| Largeur du paquet | 1.25 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-88 |
| 6 |
Make an effective common gate amplifier using this NTJD4152PT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 272 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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