| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| P|N | |
| 2 | |
| 30 | |
| ±12 | |
| 1.9@P Channel|2.6@N Channel | |
| 170@4.5V@P Channel|90@4.5V@N Channel | |
| 3.9@4.5V@ P Channel|3.4@4.5V@ N Channel | |
| 419@15V@P Channel|295@15V@N Channel | |
| 1100 | |
| 8@P Channel|2@N Channel | |
| 8@P Channel|4@N Channel | |
| 22@P Channel|14@N Channel | |
| 8@P Channel|7@N Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 |
| Largeur du paquet | 1.5 |
| Longueur du paquet | 3 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The NTGD4167CT1G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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