| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| ±20 | |
| 2.5 | |
| 11.3 | |
| 9.3@10V | |
| 9@4.5V|17.8@10V | |
| 17.8 | |
| 4.1 | |
| 3.4 | |
| 2.7 | |
| 990@12V | |
| 253 | |
| 1950 | |
| 3.6|2 | |
| 19.7|16.5 | |
| 13.5|20.2 | |
| 11.5|7 | |
| -55 | |
| 175 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 6.22(Max) mm |
| Largeur du paquet | 2.38(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | IPAK |
| 3 | |
| Forme de sonde | Through Hole |
Create an effective common drain amplifier using this NTD4863N-35G power MOSFET from ON Semiconductor. Its maximum power dissipation is 1950 mW. This product comes in rail packaging to keep individual parts separated and protected. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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