| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 8.5 | |
| 100 | |
| 1 | |
| 15@11.5V | |
| 6@4.5V|14.1@11.5V | |
| 770@12V | |
| 1920 | |
| 3.5|2.3 | |
| 21.4|17.6 | |
| 11.4|18.4 | |
| 10.5|6.3 | |
| -55 | |
| 175 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 6.22(Max) mm |
| Largeur du paquet | 2.38(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | IPAK |
| 3 | |
| Forme de sonde | Through Hole |
Make an effective common gate amplifier using this NTD4815N-35G power MOSFET from ON Semiconductor. Its maximum power dissipation is 1920 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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