| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 13.1 | |
| 100 | |
| 1 | |
| 9@11.5V | |
| 11@4.5V|25@11.5V | |
| 1456@12V | |
| 2630 | |
| 5.3|2.8 | |
| 21.3|22.7 | |
| 15.1|25.3 | |
| 12.3|7 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.38(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The NTD4809NT4G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 2630 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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