| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 3.5 | |
| 16.5 | |
| 100 | |
| 1 | |
| 5.8@10V | |
| 88@10V | |
| 88 | |
| 2700@32V | |
| 3000 | |
| 70|42 | |
| 52|153 | |
| 55|32 | |
| 8.5|19 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.83(Max) mm |
| Largeur du paquet | 9.65(Max) mm |
| Longueur du paquet | 10.29(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Increase the current or voltage in your circuit with this NTB5405NT4G power MOSFET from ON Semiconductor. Its maximum power dissipation is 3000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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