10-25% de reduction
onsemiNSV60201LT1GGP BJT
Trans GP BJT NPN 60V 2A 540mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 140 | |
| 60 | |
| 8 | |
| 0.9@10mA@1A | |
| 0.02@0.01A@0.1A|0.075@0.1A@1A|0.14@0.2A@2A | |
| 2 | |
| 160@10mA@2V|160@500mA@2V|150@1A@2V|100@2A@2V | |
| 540 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Jump-start your electronic circuit design with this versatile NPN NSV60201LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 8 V. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 8 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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