onsemiNSBA123JF3T5GBJT numérique
Trans Digital BJT PNP 50V 0.1A 297mW 3-Pin SOT-1123 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 2.2 | |
| 0.047 | |
| 0.25@0.3mA@10mA | |
| 297 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.37 mm |
| Largeur du paquet | 0.8 mm |
| Longueur du paquet | 0.6 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-1123 |
| 3 | |
| Forme de sonde | Flat |
Are you looking to build a digital signal processing device? The PNP NSBA123JF3T5G digital transistor, developed by ON Semiconductor, can provide a solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 297 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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