onsemiNGTB75N65FL2WGPuce IGBT
Trans IGBT Chip N-CH 650V 100A 595W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| ±20 | |
| 650 | |
| 1.7 | |
| 100 | |
| 0.2 | |
| 595 | |
| -55 | |
| 175 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 21 mm |
| Largeur du paquet | 5 mm |
| Longueur du paquet | 16 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
The NGTB75N65FL2WG IGBT transistor from ON Semiconductor will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 595000 mW. This product comes in rail packaging to keep individual parts separated and protected. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |
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