| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 4.5 | |
| 12 | |
| 10000 | |
| 1 | |
| 520@10V | |
| 46@10V | |
| 46 | |
| 1375@25V | |
| 39000 | |
| 23 | |
| 32 | |
| 40 | |
| 15 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 15.3(Max) |
| Largeur du paquet | 4.7(Max) |
| Longueur du paquet | 10.3(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
Use ON Semiconductor's NDF11N50ZG power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 178000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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