| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4.5 | |
| 10 | |
| 10000 | |
| 1 | |
| 750@10V | |
| 47@10V | |
| 47 | |
| 1373@25V | |
| 39000 | |
| 23 | |
| 31 | |
| 40 | |
| 15 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 15.3(Max) mm |
| Largeur du paquet | 4.7(Max) mm |
| Longueur du paquet | 10.3(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
This NDF10N60ZG power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 39000 mW. This product comes in rail packaging to keep individual parts separated and protected. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.