10-25% de reduction
onsemiMSD1819A-RT1GGP BJT
Trans GP BJT NPN 50V 0.1A 150mW 3-Pin SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 50 | |
| 7 | |
| 0.5@10mA@100mA | |
| 0.1 | |
| 100 | |
| 90@100mA@2V|210@2mA@10V | |
| 150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.85 mm |
| Largeur du paquet | 1.24 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-70 |
| 3 | |
| Forme de sonde | Gull-wing |
Design various electronic circuits with this versatile NPN MSD1819A-RT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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