| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 30 | |
| 25 | |
| 5 | |
| 0.95@5mA@50mA | |
| 0.3@5mA@50mA | |
| 0.2 | |
| 50 | |
| 120@2mA@1V|60@50mA@1V | |
| 625000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) |
| Largeur du paquet | 4.19(Max) |
| Longueur du paquet | 5.2(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| 3 | |
| Forme de sonde | Through Hole |
Use this versatile NPN MPS4124RLRAG GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
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