| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 400 | |
| 6 | |
| -65 to 150 | |
| 4 | |
| 1.5@1A@4A | |
| 2@1A@4A|5@3A@8A | |
| 8 | |
| 15@2A@5V|5@5A@5V | |
| 80000 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 8.9 |
| Largeur du paquet | 4.45 |
| Longueur du paquet | 10.1 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP MJE5852G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 80000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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