| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 7 | |
| -65 to 150 | |
| 1 | |
| 1.8@200mA@2A | |
| 0.3@50mA@500mA|0.6@100mA@1A | |
| 4 | |
| 100 | |
| 40@200mA@1V|15@1A@1V | |
| 1500 | |
| -65 | |
| 150 | |
| Box | |
| Installation | Through Hole |
| Hauteur du paquet | 11.1(Max) mm |
| Largeur du paquet | 3(Max) mm |
| Longueur du paquet | 7.8(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-225 |
| 3 | |
| Forme de sonde | Through Hole |
The three terminals of this NPN MJE243G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 15000 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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